公开(公告)号：US20200293221A1

公开(公告)日：2020-09-17

申请号：US16577790

申请日：2019-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Joon JANG ,  Chun-Um KONG ,  Ohchul KWON ,  Junki KIM ,  Hyung-Kyun BYUN

IPC: G06F3/06

Abstract: A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.