公开(公告)号：US10854614B2

公开(公告)日：2020-12-01

申请号：US16203692

申请日：2018-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pyung-Ho Kim ,  Seong-Mo Koo ,  Kuk-Han Yoon ,  Ki-Youl Kim ,  Yong-Hwan Kim

IPC: H01L27/108 ,  H01L21/3213

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. A support layer and a mold layer are partially etched off from the substrate, to form a mold pattern and a support pattern on the substrate such that a contact hole is formed through the support pattern and the mold pattern and an interconnector is exposed therethrough. A lower electrode layer is formed on the mask pattern to fill the contact hole, and a lower electrode is formed in the contact hole by partially removing the lower electrode layer and the mask pattern. The lower electrode is contact with the interconnector and is supported by the support pattern having the same thickness as the support layer.