公开(公告)号：US20250080142A1

公开(公告)日：2025-03-06

申请号：US18676949

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HEESOO KIM ,  SANGYUN LEE ,  JEONGYEOL BAE ,  JIYOUNG LEE ,  SANGMIN YOO ,  JONGSOO LEE

IPC: H04B1/00 ,  H04B1/04 ,  H04B1/10 ,  H04B1/525

Abstract: An RF circuit including: first and second ports receiving first and second RF signals; a (1-1)-th amplification stage and a (1-2)-th amplification stage connected to the first port and a first ground to amplify the first RF signal; a (2-1)-th amplification stage and a (2-2)-th amplification stage connected to the second port and a second ground to amplify the second RF signal; a (1-1)-th switch connected to the (1-1)-th amplification stage and the second ground, and a (1-2)-th switch connected to the (1-2)-th amplification stage and the second ground; a (2-1)-th switch connected to the (2-1)-th amplification stage and the first ground, and a (2-2)-th switch connected to the (2-2)-th amplification stage and the first ground; and a mixer to mix the first RF signal or the second RF signal with an LO signal, and mix the first RF signal or the second RF signal with the LO signal.