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1.发明公开公开(公告)号：US20240233811A9
公开(公告)日：2024-07-11
申请号：US18340216
申请日：2023-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DONGGEON KIM , BOK-YEON WON , SELYUNG YOON , JONGHYUK KIM
IPC: G11C11/4091 , G11C11/4094 , G11C11/4096
CPC classification number: G11C11/4091 , G11C11/4094 , G11C11/4096
Abstract: A bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a PMOS driver or an NMOS driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. The column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.
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2.发明公开公开(公告)号：US20240135987A1
公开(公告)日：2024-04-25
申请号：US18340216
申请日：2023-06-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DONGGEON KIM , BOK-YEON WON , SELYUNG YOON , JONGHYUK KIM
IPC: G11C11/4091 , G11C11/4094 , G11C11/4096
CPC classification number: G11C11/4091 , G11C11/4094 , G11C11/4096
Abstract: A bit line sense amplifier of a semiconductor memory device includes: sense amplifier blocks including a PMOS driver or an NMOS driver that detects and amplifies a signal difference between a bit line and a complimentary bit line, and sequentially arranged in a bit line extending direction; column selection units that connect the bit line and a local input/output line according to a first column selection signal; complimentary column selection units that connect the complimentary bit line and a complimentary local input/output line according to a second column selection signal; column selection lines that transmit the first column selection signal to each of the column selection units; and complimentary column selection lines that transmit the second column selection signal to each of the complimentary column selection units. The column selection units and the complimentary column selection units may be disposed to be distributed between the sense amplifier blocks.
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