公开(公告)号：US20250169067A1

公开(公告)日：2025-05-22

申请号：US19028305

申请日：2025-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAESAN KIM ,  SEUNGHAN WOO ,  HAESUK LEE ,  YOUNGCHEON KWON ,  REUM OH

IPC: H10B12/00 ,  H01L23/48 ,  H01L23/528 ,  H10D1/43 ,  H10D1/66

Abstract: A semiconductor device includes a semiconductor structure including a semiconductor substrate having an active zone with a channel; a through silicon via (TSV) structure including a power TSV configured to transmit power and a signal TSV configured to transmit a signal; and a keep-out zone located a predetermined distance away from the TSV structure and bounded by the active zone. The TSV structure penetrates the semiconductor substrate. The keep-out zone includes a first element area a first distance away from the power TSV, and a second element area a second distance away from the signal TSV.