公开(公告)号：US20200286938A1

公开(公告)日：2020-09-10

申请号：US16551114

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu JIN ,  Yong Hun KWON ,  Young Chan KIM ,  Sae Young KIM ,  Sung Young SEO ,  Moo Sup LIM ,  Tae Sub JUNG ,  Sung Ho CHOI

IPC: H01L27/146

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.