公开(公告)号：US20200219879A1

公开(公告)日：2020-07-09

申请号：US16439999

申请日：2019-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo Cheol SHIN ,  Myung Gil KANG ,  Sadaaki MASUOKA ,  Sang Hoo LEE ,  Sung Man WHANG

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/04 ,  H01L29/16 ,  H01L21/8238 ,  H01L21/02

Abstract: A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.