公开(公告)号：US20130320479A1

公开(公告)日：2013-12-05

申请号：US13836226

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Chak AHN ,  Kyung Ho LEE ,  Sang Jun CHOI

IPC: H01L31/02 ,  H01L31/18

CPC classification number: H01L31/02 ,  H01L27/14609 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/18

Abstract: An image sensor includes a photodetector formed in an epitaxial layer, and trench isolations each formed in a direction from a back side of the epitaxial layer to a front side of the epitaxial layer. Each of the trench isolations is filled with at least one insulator, and the insulator is a negative charge material.

Abstract translation: 图像传感器包括形成在外延层中的光电检测器和沟槽隔离，每个沟槽隔离件沿从外延层的背面到外延层的前侧的方向形成。 每个沟槽隔离物填充有至少一个绝缘体，绝缘体是负电荷材料。