公开(公告)号：US20190035805A1

公开(公告)日：2019-01-31

申请号：US15941917

申请日：2018-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Il Lee ,  Ji-Mo Gu ,  Hyun-Mog Park ,  Tak Lee ,  Jun-Ho Cha ,  Sang-Jun Hong

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L29/10 ,  H01L29/423

Abstract: A vertical memory device includes gate electrodes spaced apart from each other in a first direction. Each of the gate electrodes extends in a second direction. Insulation patterns extend in the second direction between adjacent gate electrodes. A channel structure extends in the first direction. The channel structure extends through at least a portion of the gate electrode structure and at least a portion of the insulation pattern structure. The gate electrode structure includes at least one first gate electrode and a plurality of second gate electrodes sequentially stacked in the first direction on the substrate. Lower and upper surfaces of a first insulation pattern are bent away from the upper surface of the substrate along the first direction. A sidewall connecting the lower and upper surfaces of the first insulation pattern is slanted with respect to the upper surface of the substrate.

公开(公告)号：US11011536B2

公开(公告)日：2021-05-18

申请号：US15941917

申请日：2018-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoung-Il Lee ,  Ji-Mo Gu ,  Hyun-Mog Park ,  Tak Lee ,  Jun-Ho Cha ,  Sang-Jun Hong

IPC: H01L27/11582 ,  H01L29/423 ,  H01L29/10 ,  H01L27/1157

Abstract: A vertical memory device includes gate electrodes spaced apart from each other in a first direction. Each of the gate electrodes extends in a second direction. Insulation patterns extend in the second direction between adjacent gate electrodes. A channel structure extends in the first direction. The channel structure extends through at least a portion of the gate electrode structure and at least a portion of the insulation pattern structure. The gate electrode structure includes at least one first gate electrode and a plurality of second gate electrodes sequentially stacked in the first direction on the substrate. Lower and upper surfaces of a first insulation pattern are bent away from the upper surface of the substrate along the first direction. A sidewall connecting the lower and upper surfaces of the first insulation pattern is slanted with respect to the upper surface of the substrate.