公开(公告)号：US20130087891A1

公开(公告)日：2013-04-11

申请号：US13647785

申请日：2012-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Min KANG ,  Hyungwoo KIM ,  Ki-chul PARK ,  SangMan LEE

IPC: H01L21/784 ,  H01L23/544 ,  H01L21/20

CPC classification number: H01L23/585 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.

Abstract translation: 公开了一种制造半导体芯片的方法。 该方法包括形成硅层; 形成在所述硅层上形成的第一层，并且包括围绕第一芯片区域的第一密封环和围绕第二芯片区域的第二密封环; 以及形成在所述第一层上形成的第二层，并且包括连接所述第一和第二芯片区域之一的金属互连件和外部端子。