公开(公告)号：US20230020463A1

公开(公告)日：2023-01-19

申请号：US17860699

申请日：2022-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheolhwan LIM ,  Kwangho KIM ,  Sangjin LIM ,  Haejung CHOI ,  Donghun HEO

IPC: H01L23/00 ,  G01J1/42

Abstract: A laser detecting circuit is provided. The laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. The second inverter includes a plurality of PMOS transistors connected in series between a first source voltage and the first node, and a plurality of NMOS transistors. A gate of each of the plurality of PMOS transistors is connected to the second node, and a drain of each of the plurality of NMOS transistors is connected to the first node. The plurality of NMOS transistors includes dummy NMOS transistors and normal NMOS transistors.