公开(公告)号：US12256567B2

公开(公告)日：2025-03-18

申请号：US17851857

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wook Park ,  Yun Kyoung Song ,  Bong Keun Kim ,  Se Jin Park

IPC: H10D84/01 ,  H10D30/43 ,  H10D30/67 ,  H10D62/10 ,  H10D62/13 ,  H10D64/23 ,  H10D84/03 ,  H10D84/83

Abstract: A semiconductor device includes a first active pattern that extends in a first horizontal direction, a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horizontal direction, a third active pattern which extends in the first horizontal direction, and is spaced apart from the second active pattern by a second distance greater than the first distance in the second horizontal direction, a first gate electrode which extends in the second horizontal direction on the first to third active patterns, a second gate electrode which extends in the second horizontal direction on the first and second active patterns, and is spaced apart from the first gate electrode in the first horizontal direction, a first gate contact and a second gate contact which extends in the second horizontal direction on the second gate electrode.