公开(公告)号：US20230204275A1

公开(公告)日：2023-06-29

申请号：US18070806

申请日：2022-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongchan LEE ,  Inyong HWANG ,  Ilsung BAE ,  Jinyoung SONG ,  Subin YUN ,  Wonho JANG ,  Youngmin YOU

IPC: F25D17/06 ,  F25D17/04

CPC classification number: F25D17/062 ,  F25D17/045 ,  F25D2317/063

Abstract: A refrigerator includes a body including an inner case, a first storage compartment, a second storage compartment, a third storage compartment, a first partition between the second storage and the third storage compartments, a second partition between the first and the second storage compartments, a cold air supplier in the third storage compartment to generate cold air, a first communication hole, a second communication hole to face the first communication hole, a first guide duct formed in the first partition to guide the cold air from the first communication hole to the second communication hole, and a second guide duct formed in the second partition to guide the cold air which has flown to the first guide duct, to the second storage compartment, the second guide duct connected to the first guide duct through the second communication hole.

公开(公告)号：US20240318896A1

公开(公告)日：2024-09-26

申请号：US18677649

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonho JANG ,  Inyong HWANG ,  Jonghoon OH ,  Chulhee KIM ,  Subin YUN ,  Seongchan LEE

IPC: F25D23/02

CPC classification number: F25D23/028 ,  F25D2201/10 ,  F25D2323/024

Abstract: A refrigerator includes an outer case, an inner case forming a storage compartment and including a guide receiving space, and a guide mounting groove, an insulation between the outer and inner cases, a first door rotatably coupled to the outer case to cover a portion of the storage compartment, a second door rotatably coupled to the outer case to cover another portion of the storage compartment, a bar rotatable with one of the first and second doors and cover a gap between the first and second doors, and a rotation guide disposed on an upper portion of the storage compartment to guide the bar to allow rotation of the bar in response to opening or closing of the first or second door and including a guide body partially accommodated in the guide receiving space and a protrusion inserted into the guide mounting groove to prevent movement of the rotation guide.

公开(公告)号：US20240077248A1

公开(公告)日：2024-03-07

申请号：US18151241

申请日：2023-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Subin YUN ,  Inyong HWANG ,  Chulhee KIM ,  Seongchan LEE

IPC: F25D23/06

CPC classification number: F25D23/069 ,  F25D2201/122

Abstract: A refrigerator is provided. The refrigerator includes: an outer case forming an exterior of the refrigerator; an inner case disposed inside the outer case, forming a storage compartment therein, and having a communication hole formed through a side surface thereof; a partition supported by the inner case to partition the storage compartment, and including a heat insulator inlet at a position corresponding to the communication hole; and a heat insulator filled between the outer case and the inner case and filled into the partition through the heat insulator inlet, wherein the partition includes a first vertical partitioning wall disposed between the outer case and the inner case and having a height to limit a size of the heat insulator inlet.

公开(公告)号：US20220005826A1

公开(公告)日：2022-01-06

申请号：US17148334

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suhwan LIM ,  Jaehun JUNG ,  Sanghoon KIM ,  Taehun KIM ,  Seongchan LEE

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11573

Abstract: A semiconductor device includes gate electrodes and insulating layers spaced apart from each other on a substrate and alternately stacked in a direction perpendicular to an upper surface of the substrate, and channel structures that extend through stack structures. Ones of the structures include a channel insulating layer, a pad layer on the channel insulating layer, and a channel layer. The channel layer includes a first channel region, and a second channel region including a semiconductor material having a length shorter than a length of the first channel region and having an impurity concentration of a first conductivity type and the pad layer includes a semiconductor material doped with a second conductivity type impurity. A height level of a lower surface of the second channel region is lower than a height level of a lower surface of a first erase gate electrode.