公开(公告)号：US11557513B2

公开(公告)日：2023-01-17

申请号：US17215365

申请日：2021-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Keun Kim ,  Jae Wha Park ,  Jun Kwan Kim ,  Hyo Jeong Moon ,  Seung Jong Park ,  Seul Gi Bae

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.

公开(公告)号：US10971395B2

公开(公告)日：2021-04-06

申请号：US16271120

申请日：2019-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Keun Kim ,  Jae Wha Park ,  Jun Kwan Kim ,  Hyo Jeong Moon ,  Seung Jong Park ,  Seul Gi Bae

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L23/522

Abstract: A method for fabricating a semiconductor device includes forming a first wiring layer, the first wiring layer including a first metal wiring and a first interlayer insulating film wrapping the first metal wiring on a substrate, forming a first via layer, the first via layer including a first via that is in electrical connection with the first metal wiring, and a second interlayer insulating film wrapping the first via on the first wiring layer, and forming a second wiring layer, the second wiring layer including a second metal wiring that is in electrical connection with the first via, and a third interlayer insulating film wrapping the second metal wiring on the first via layer, wherein the third interlayer insulating film contains deuterium and is formed through chemical vapor deposition using a first gas containing deuterium and a second gas containing hydrogen.