公开(公告)号：US11211427B2

公开(公告)日：2021-12-28

申请号：US16386893

申请日：2019-04-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinwoo Lee ,  Zhe Wu ,  Kyubong Jung ,  Seung-geun Yu ,  Ja Bin Lee

IPC分类号： H01L27/24 ,  H01L45/00

摘要： A switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern, and a second switching pattern disposed on the first switching pattern and having a density different from a density of the first switching pattern.