公开(公告)号：US20140198183A1

公开(公告)日：2014-07-17

申请号：US14155815

申请日：2014-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seoung-hyun Kim ,  Yong-jei Lee ,  Joo-yeong Gong ,  Sung-chul Kim ,  Yoon-dong Park ,  Hee-woo Park ,  Seung-won Cha

IPC: H04N13/02

CPC classification number: H04N5/3745 ,  G01S7/4914 ,  G01S15/36 ,  G01S17/89 ,  H04N5/363

Abstract: A depth-sensing pixel included in a three-dimensional (3D) image sensor includes: a photoelectric conversion device configured to generate an electrical charge by converting modulated light reflected by a subject; a capture transistor, controlled by a capture signal applied to the gate thereof, the photoelectric conversion device being connected to the drain thereof; and a transfer transistor, controlled by a transfer signal applied to the gate thereof, the source of the capture transistor being connected to the drain thereof, and a floating diffusion region being connected to the source thereof.

Abstract translation: 包括在三维（3D）图像传感器中的深度感测像素包括：光电转换装置，被配置为通过转换由被摄体反射的调制光来产生电荷; 由施加到其栅极的捕获信号控制的捕获晶体管，所述光电转换装置连接到其漏极; 以及由施加到其栅极的转移信号控制的转移晶体管，捕获晶体管的源极连接到其漏极，以及与其源极连接的浮动扩散区域。