公开(公告)号：US20230047372A1

公开(公告)日：2023-02-16

申请号：US17711165

申请日：2022-04-01

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Minkyun KIM ,  Donghyuk JOO ,  Inho KIM ,  Seungmi SON ,  Sungwook LEE

IPC分类号： H01L33/46 ,  H01L33/24 ,  H01L33/40 ,  H01L33/42 ,  H01L33/62

摘要： A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.