公开(公告)号：US20250138940A1

公开(公告)日：2025-05-01

申请号：US18639856

申请日：2024-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwasuk Cho ,  Seungwoo Yu ,  Byungkwan Chun

IPC: G06F11/10

Abstract: A nonvolatile memory device includes a plurality of latch groups, an address controller, an encoder, and a buffer. The address controller controls an input address and an output address to indicate one of the plurality of latch groups. The encoder receives sector data from a latch group corresponding to the output address among the plurality of latch groups and also compresses the received sector data. The buffer stores the compressed sector data. Among the plurality of latch groups, the compressed sector data stored in the buffer is overwritten in a latch group corresponding to the input address.