公开(公告)号：US20250031467A1

公开(公告)日：2025-01-23

申请号：US18737207

申请日：2024-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooyoung Kang ,  Doowon Kwon ,  Yongjun Kim ,  Sol Yoon ,  Keunhyoung Park ,  Dongjun Oh

IPC: H01L27/146 ,  H04N25/79

Abstract: An image sensor is described comprising a first, a second, and a third stack mounted together. The first stack includes a first semiconductor substrate with a photoelectric conversion region, a floating diffusion region, and a transmission gate. The photoelectric conversion region absorbs light, and the charges freed by the light absorption are stored in the floating diffusion region prior to being transferred to other circuitry by the transmission gate. The transmission gate comprises an etch stop film on an upper surface and on a sidewall. The second stack, attached to the first stack, includes a second semiconductor substrate in which is located a pixel gate. The pixel gate is electrically connected with the floating diffusion region and further comprises a gate spacer on a sidewall of the pixel gate. The third stack, attached to the second stack, includes a logic transistor.