公开(公告)号：US11462577B2

公开(公告)日：2022-10-04

申请号：US16926897

申请日：2020-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Min Lee ,  Ju-Eun Kim ,  Soo Jin Hong

IPC: H01L27/146

Abstract: An image device includes a first active region and a second active region disposed on a substrate. Each of the first active region and the second active region includes a gate insulating layer disposed on the substrate and a gate electrode disposed on the gate insulating layer. At least one of the first active region and the second active region further includes a first passivation layer containing fluorine (F) disposed between the gate insulating layer and the gate electrode. A concentration of fluorine in the gate insulating layer is higher than a concentration of fluorine in the gate electrode.

公开(公告)号：US11257857B2

公开(公告)日：2022-02-22

申请号：US16655762

申请日：2019-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung Hur ,  Jin Gyun Kim ,  Kook Tae Kim ,  Young Bin Lee ,  Ha Jin Lim ,  Taek Soo Jeon ,  Soo Jin Hong

IPC: H04N5/335 ,  H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.