公开(公告)号：US11635697B2

公开(公告)日：2023-04-25

申请号：US17234908

申请日：2021-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soon Hwan Cha ,  Chan Hwang ,  Woo Jin Jung

IPC: G03F7/20

Abstract: A semiconductor device manufacturing system includes a photolithography apparatus that performs exposure. On a semiconductor substrate including a chip area and a scribe lane area. An etching apparatus etches the exposed semiconductor substrate. An observing apparatus images the etched semiconductor substrate. A controller controls the photolithography apparatus and the etching apparatus. The controller generates a first mask pattern and provides the first mask pattern to the photolithography apparatus. The photolithography apparatus performs exposure on the semiconductor substrate using the first mask pattern. The etching apparatus performs etching on the exposed semiconductor substrate to provide an etched semiconductor substrate. The observing apparatus generates a first semiconductor substrate image by imaging the etched semiconductor substrate corresponding to the scribe lane area. The controller generates a second mask pattern based on the first mask pattern and the first semiconductor substrate image, and provides the second mask pattern to the photolithography apparatus.