公开(公告)号：US20230068716A1

公开(公告)日：2023-03-02

申请号：US17751093

申请日：2022-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungju Kang ,  Raheel Azmat ,  Jiwook Kwon ,  Suhyeon Kim ,  Kwanyoung Chun

IPC: H01L27/02 ,  G06F30/392 ,  G06F30/394 ,  H01L23/528 ,  H01L23/522 ,  H01L27/118

Abstract: A semiconductor device includes: a standard cell including a plurality of active patterns extending in a first direction, a gate structure intersecting the plurality of active patterns and extending in a second direction, and source/drain regions respectively provided on the plurality of active patterns positioned on both sides of the gate structure; a plurality of signal lines extending on the standard cell in the first direction, arranged in the second direction, and electrically connected to the standard cell; and first and second power straps extending on the standard cell in the first direction, electrically connected to some of the source/drain regions, and supplying power to the standard cell, wherein each of the first and second power straps is provided on the standard cell while provided on the same line as any one of the plurality of signal lines in the first direction.