公开(公告)号：US20240421232A1

公开(公告)日：2024-12-19

申请号：US18586125

申请日：2024-02-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YANG ,  Sung-Hwan JANG ,  Do Hee KIM ,  Jin Bum KIM ,  Sung Uk JANG ,  Inhae ZOH

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a plurality of wire patterns spaced apart from the lower pattern in a second direction on the lower pattern, and a gate electrode surrounding the plurality of wire patterns and extending in a third direction, on the lower pattern. Each of the plurality of wire patterns includes a transition metal dichalcogenide (TMD) material. Each of the plurality of wire patterns includes a pair of first areas protruding from sidewalls of the gate electrode in the first direction and a second area between the first areas. A phase of the first area is different from a phase of the second area.

公开(公告)号：US20250040245A1

公开(公告)日：2025-01-30

申请号：US18602827

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YANG ,  Sung-Hwan JANG ,  Jinbum KIM ,  Sunguk JANG

IPC: H01L27/118

Abstract: A semiconductor device includes a substrate, a first device region on the substrate, a second device region on the substrate and spaced apart from the first device region in a first direction, a first dummy region between the first device region and the second device region, and an insulating pattern in the first device region, the second device region and the first dummy region, where the first dummy region includes a seed pattern on the insulating pattern, and a seed mask pattern at least partially covering a top surface of the seed pattern and extending from the top surface of the seed pattern along a first sidewall of the seed pattern, where the insulating pattern in the first dummy region is on the substrate, and where the seed pattern includes a transition metal dichalcogenide.