公开(公告)号：US20240349497A1

公开(公告)日：2024-10-17

申请号：US18637013

申请日：2024-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk YOUN ,  Taehyung KIM ,  Hoyoung TANG

IPC: H10B20/00

CPC classification number: H10B20/387

Abstract: An integrated circuit includes a read only memory (ROM) cell which includes an on-cell. The on-cell includes: a first source/drain region and a second source/drain region; a frontside contact between the first source/drain region and a bit line on a front side of the on-cell; and a backside contact between the second source/drain region and a power line on a back side of the on-cell. The bit line is configured to provide a bit line signal to the on-cell, and the power line is configured to provide a power supply voltage signal to the on-cell. The bit line and the power line are vertically aligned with each other.