公开(公告)号：US11482670B2

公开(公告)日：2022-10-25

申请号：US16909218

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiho Park ,  Kwangmin Park ,  Jeonghee Park ,  Changyup Park ,  Sukhwan Chung

IPC: H01L45/00

Abstract: A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.