-
公开(公告)号:US11233118B2
公开(公告)日:2022-01-25
申请号:US16400475
申请日:2019-05-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young-Lim Park , Sun-Min Moon , Chang-Hwa Jung , Young-Geun Park , Jong-Bom Seo , Kyu-Ho Cho
IPC: H01L49/02 , C23C16/455
Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.