公开(公告)号：US11233118B2

公开(公告)日：2022-01-25

申请号：US16400475

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Sun-Min Moon ,  Chang-Hwa Jung ,  Young-Geun Park ,  Jong-Bom Seo ,  Kyu-Ho Cho

IPC: H01L49/02 ,  C23C16/455

Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.