公开(公告)号：US20230225117A1

公开(公告)日：2023-07-13

申请号：US17862638

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok HONG ,  Sung-Jin YEO ,  Yoongi HONG

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10894

Abstract: A semiconductor device includes a substrate including cell and core regions respectively having first and second active patterns having respective, opposing sidewall surfaces at least partially defining a trench therebetween, and a boundary region between the cell and core regions, a device isolation layer on the boundary region to fill the trench, a line structure on the first active pattern and extended from the cell region to the boundary region, and a capping pattern covering an end of the line structure on the boundary region. The device isolation layer includes one or more inner surfaces at least partially defining a recess region, which is adjacent to the end of the line structure, and the capping pattern is extended along the end of the line structure into the recess region. A top surface of the device isolation layer is between the line structure and a bottom surface of the capping pattern.

公开(公告)号：US20240334678A1

公开(公告)日：2024-10-03

申请号：US18735313

申请日：2024-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In KANG ,  Jun Young CHOI ,  Yoon Gi HONG ,  Tae Hoon KIM ,  Sung-Jin YEO ,  Sang Yeon HAN

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/34

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.

公开(公告)号：US20230022373A1

公开(公告)日：2023-01-26

申请号：US17657202

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong In KANG ,  Jun Young CHOI ,  Yoon Gi HONG ,  Tae Hoon KIM ,  Sung-Jin YEO ,  Sang Yeon HAN

IPC: H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.