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公开(公告)号:US20230225117A1
公开(公告)日:2023-07-13
申请号:US17862638
申请日:2022-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jiseok HONG , Sung-Jin YEO , Yoongi HONG
IPC: H01L27/108
CPC classification number: H01L27/10897 , H01L27/10814 , H01L27/10823 , H01L27/10894
Abstract: A semiconductor device includes a substrate including cell and core regions respectively having first and second active patterns having respective, opposing sidewall surfaces at least partially defining a trench therebetween, and a boundary region between the cell and core regions, a device isolation layer on the boundary region to fill the trench, a line structure on the first active pattern and extended from the cell region to the boundary region, and a capping pattern covering an end of the line structure on the boundary region. The device isolation layer includes one or more inner surfaces at least partially defining a recess region, which is adjacent to the end of the line structure, and the capping pattern is extended along the end of the line structure into the recess region. A top surface of the device isolation layer is between the line structure and a bottom surface of the capping pattern.
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公开(公告)号:US20240334678A1
公开(公告)日:2024-10-03
申请号:US18735313
申请日:2024-06-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jong In KANG , Jun Young CHOI , Yoon Gi HONG , Tae Hoon KIM , Sung-Jin YEO , Sang Yeon HAN
IPC: H10B12/00
CPC classification number: H10B12/315 , H10B12/34
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.
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公开(公告)号:US20230022373A1
公开(公告)日:2023-01-26
申请号:US17657202
申请日:2022-03-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jong In KANG , Jun Young CHOI , Yoon Gi HONG , Tae Hoon KIM , Sung-Jin YEO , Sang Yeon HAN
IPC: H01L27/108
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region and a core region, a boundary element separation film which is placed inside the substrate, and separates the cell region and the core region, and a bit line which is placed on the cell region and the boundary element separation film and extends along a first direction, in which the boundary element separation film includes a first region and a second region, a height of an upper side of the first region of the boundary element separation film is different from a height of an upper side of the second region of the boundary element separation film, on a basis of a bottom side of the boundary element separation film, and the bit line is placed over the first region and the second region of the boundary element separation film.
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