公开(公告)号：US20200083250A1

公开(公告)日：2020-03-12

申请号：US16383855

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNG-JIN JUNG ,  Hyoung-ryeol In ,  Sung-han Cho

IPC: H01L27/11582 ,  H01L29/10 ,  H01L23/535

Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.

公开(公告)号：US11133327B2

公开(公告)日：2021-09-28

申请号：US16383855

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-jin Jung ,  Hyoung-ryeol In ,  Sung-han Cho

IPC: H01L27/11582 ,  H01L23/535 ,  H01L29/10

Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.