公开(公告)号：US20250122079A1

公开(公告)日：2025-04-17

申请号：US18677245

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myungbeom PARK ,  Sungbae KIM ,  Jongsoo KIM ,  Samjong CHOI

IPC: C01B23/00

Abstract: A method of recycling helium from a waste gas generated in a semiconductor process includes forming a first treatment gas by treating helium-containing waste gas emitted from a semiconductor process facility by using a scrubber module, transporting the first treatment gas to a purification facility, forming a first helium gas with a first purity by fractionating the first treatment gas in the purification facility, forming a second helium gas with a second purity by treating the first helium gas by using a back-end purification module in the purification facility, and providing the second helium gas to the semiconductor process facility.