公开(公告)号：US20190326317A1

公开(公告)日：2019-10-24

申请号：US16223894

申请日：2018-12-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Jin JUNG ,  Sunghan CHO

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/1157 ,  H01L29/423

Abstract: A semiconductor memory device includes a substrate including a cell array region and a pad region, a stack structure disposed on the cell array region and the pad region of the substrate and including gate electrodes, a device isolation layer vertically overlapping the stack structure and disposed in the pad region of the substrate, a dummy vertical channel portion penetrating the stack structure on the pad region of the substrate and disposed in the device isolation layer, and a dummy semiconductor pillar disposed between the dummy vertical channel portion and one portion of the substrate being in contact with one sidewall of the device isolation layer.