公开(公告)号：US11502689B2

公开(公告)日：2022-11-15

申请号：US17276067

申请日：2019-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Odo Yu ,  Sunghoon Byeon ,  Hwasung Kim ,  Suho Jo ,  Jonghun Ha

IPC: H03K19/018 ,  H03K19/0185

Abstract: A communication device is disclosed. The disclosed communication device comprises: a transmission circuit for generating a transmission signal by using a first field effect transistor (FET) and a signal inputted from a first control circuit, and transmitting the transmission signal to a second control circuit; and a reception circuit for generating a reception signal by using a second field effect transistor (FET) and a signal received from the second control circuit, and outputting the reception signal to the first control circuit.

公开(公告)号：US12143104B2

公开(公告)日：2024-11-12

申请号：US18050934

申请日：2022-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Odo Yu ,  Sunghoon Byeon ,  Hwasung Kim ,  Suho Jo ,  Jonghun Ha

IPC: H03K19/0185

Abstract: A communication device is disclosed. The disclosed communication device comprises: a transmission circuit for generating a transmission signal by using a first field effect transistor (FET) and a signal inputted from a first control circuit, and transmitting the transmission signal to a second control circuit; and a reception circuit for generating a reception signal by using a second field effect transistor (FET) and a signal received from the second control circuit, and outputting the reception signal to the first control circuit.