公开(公告)号：US20250118662A1

公开(公告)日：2025-04-10

申请号：US18735507

申请日：2024-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun Kwon ,  Sunoo Kim ,  Jonghwa Park ,  Yongseung Bang ,  Jaeheon Lee

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48 ,  H01L23/522

Abstract: A semiconductor device includes a semiconductor substrate, a first insulating layer disposed on a first surface of the semiconductor substrate, a through via passing through both the semiconductor substrate and the first insulating layer, a protective barrier wall pattern disposed within the first insulating layer and on a sidewall of the through via, a first wiring structure disposed within the first insulating layer and including a first via portion and a first wiring portion, and a second insulating layer disposed on an upper surface of the first insulating layer and at least partially covering an upper surface of the first wiring structure and an upper surface of the protective barrier wall pattern.