公开(公告)号：US20230343698A1

公开(公告)日：2023-10-26

申请号：US17883073

申请日：2022-08-08

Applicant: SAMSUNG ELECTRONICS CO, LTD.

Inventor： Jaemyung CHOI ,  Tae Sun KIM ,  Janggeun LEE ,  Kang-ill SEO

IPC: H01L23/522 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76834 ,  H01L21/76832 ,  H01L21/76807 ,  H01L23/53295

Abstract: Provided is a semiconductor device including at least one front-end-of-line (FEOL) element connected to an interconnect structure, the interconnect structure including: a 1st metal pattern or via structure with a spacer structure on a sidewall thereof; and a 1st interlayer dielectric (ILD) layer formed at sides of the 1st metal pattern or via structure with the spacer structure on the sidewall thereof, wherein the spacer structure includes a dielectric material different from a material included in the 1st ILD layer.

公开(公告)号：US20140244908A1

公开(公告)日：2014-08-28

申请号：US14144682

申请日：2013-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong Woon KIM ,  Kwan Ho KIM ,  Seok Min KIM ,  Tae Sun KIM

IPC: G06F12/06

CPC classification number: G06F12/06 ,  G06F12/0292

Abstract: A method of operating an integrated circuit is provided. The method includes receiving a data block offset from a second storage device, obtaining a target entry address using the data block offset, and reading an entry among a plurality of entries comprised in a buffer descriptor stored in a first storage device based on the target entry address. The method also includes reading data from a data buffer among a plurality of data buffers included in the first storage device using a physical address included in the entry and transmitting the data to the second storage device.

Abstract translation: 提供一种操作集成电路的方法。 该方法包括从第二存储设备接收数据块偏移量，使用数据块偏移获取目标条目地址，以及基于目标条目读取包含在存储在第一存储设备中的缓冲器描述符中的多个条目中的条目 地址。 该方法还包括使用包含在条目中的物理地址从包括在第一存储装置中的多个数据缓冲器中的数据缓冲器读取数据，并将数据发送到第二存储装置。