公开(公告)号：US10566370B2

公开(公告)日：2020-02-18

申请号：US16018709

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US10998366B2

公开(公告)日：2021-05-04

申请号：US16732561

申请日：2020-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  Tae Young Song ,  Min Jun Choi

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024 ,  H01L51/42 ,  H01L31/102

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US20230187463A1

公开(公告)日：2023-06-15

申请号：US18060180

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Yun Park ,  Yeon Sook Kim ,  In Ji Lee ,  Tae Young Song

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor substrate includes a semiconductor substrate layer and a semiconductor epitaxial layer on the substrate layer. The semiconductor substrate layer has a boron (B) doping concentration therein in a range from 3×1018 cm−3 to 1×1019 cm−3, whereas the semiconductor epitaxial layer has a boron (B) doping concentration therein in a range from 1×1016 cm−3 to 6×1016 cm−3.

公开(公告)号：US11482564B2

公开(公告)日：2022-10-25

申请号：US16941958

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

公开(公告)号：US10741607B2

公开(公告)日：2020-08-11

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Yoon ,  Doo Won Kwon ,  Kwan Sik Kim ,  In Gyu Baek ,  Tae Young Song

IPC: H01L27/32 ,  H01L27/146 ,  H01L21/56 ,  H01L21/683 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L31/18 ,  H01L23/00

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.