公开(公告)号：US10825830B2

公开(公告)日：2020-11-03

申请号：US16392958

申请日：2019-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Chul Jung ,  Bong-Tae Park ,  Jae-Joo Shim

IPC: H01L23/528 ,  H01L27/11565 ,  H01L27/11582 ,  H01L21/768

Abstract: A vertical semiconductor device includes a substrate with a first and second region. A conductive pattern on the first region extends in a first direction. The first region includes a cell region, a first dummy region and a second dummy region. The conductive pattern extends in a first direction. A pad is disposed on the second region, the pad contacts a side of the conductive pattern. A plurality of first dummy structures extends through the conductive pattern on the first dummy region. A plurality of second dummy structures extend through the conductive pattern on the second dummy region, the second dummy structures disposed in a plurality of columns that extend in a second direction perpendicular to the first direction. Widths of upper surfaces of the second dummy structures are different in each column, and the widths of upper surfaces of the second dummy structures increase toward the second region.