公开(公告)号：US20250081513A1

公开(公告)日：2025-03-06

申请号：US18594049

申请日：2024-03-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Eon BAE ,  Hokyun AN

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes: a substrate including a first active pattern and a second active pattern which are spaced apart from each other; a first gate structure disposed on the first active pattern; a second gate structure disposed on the second active pattern; and a channel semiconductor pattern disposed between the second active pattern and the second gate structure, wherein the first gate structure includes: a first insulating pattern, a second insulating pattern and a first high-k dielectric pattern, which are stacked on the first active pattern, wherein the second gate structure includes: a third insulating pattern and a second high-k dielectric pattern, which are stacked on the channel semiconductor pattern, and wherein a thickness of the third insulating pattern ranges from 12 Å to 13 Å.