公开(公告)号：US20220149089A1

公开(公告)日：2022-05-12

申请号：US17515769

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghoon KHANG ,  Kwangyoung OH ,  Chongkwang CHANG ,  Jinyoung KIM ,  Taehun LEE

IPC: H01L27/146 ,  H04N5/369

Abstract: An image sensor includes: a semiconductor substrate having a first side and a second side opposite to each other; a plurality of photoelectric regions arranged in the semiconductor substrate in a first direction and a second direction, perpendicular to each other, in a first region of the semiconductor substrate; and a first separation structure disposed between the plurality of photoelectric regions in the first region of the semiconductor substrate. The first separation structure includes a lower separation structure and an upper separation structure disposed above the lower separation structure, and the first separation structure includes a linear portion located between the plurality of photoelectric regions and extending in the first direction, wherein, in a cross-sectional structure of the linear portion of the first separation structure in the first direction, at least one of an upper surface of the lower separation structure and a lower surface of the upper separation structure has a wavy shape.