公开(公告)号：US20250038151A1

公开(公告)日：2025-01-30

申请号：US18591889

申请日：2024-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyuha Shim ,  Chisung Oh ,  Useung Shin

IPC: H01L25/065

Abstract: According to some implementations, provided is a semiconductor device including: a first semiconductor chip including first through-vias, and first front pads electrically connected to the first through-vias; and a second semiconductor chip disposed below the first semiconductor chip, and including a substrate, a circuit layer disposed below the substrate, second front pads below the circuit layer, rear pads disposed on the substrate and electrically connected to the corresponding first front pads, second through-vias penetrating through the substrate and electrically connected to the second front pads, and a rear redistribution layer electrically connecting the second through-vias and the rear pads, wherein at least one of the rear pads is spaced apart from a corresponding one of the second through-vias in a horizontal direction, and overlaps a corresponding one of the first through-vias in a vertical direction.