公开(公告)号：US20250078888A1

公开(公告)日：2025-03-06

申请号：US18791722

申请日：2024-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tongsung Kim ,  Woojung Kim ,  Seonkyoo Lee

IPC: G11C7/22 ,  G11C7/10

Abstract: A memory device correcting a data strobe signal when performing a write operation includes a correction circuit configured to receive the data strobe signal and to generate a reference delay for the received data strobe signal, and a main circuit configured to correct the data strobe signal based on the reference delay generated by the correction circuit. The correction circuit includes a delay cell configured to generate a reference delay for the data strobe signal received by the main circuit and to store the generated reference delay, when a data signal is input to the main circuit, a first counter configured to adjust the reference delay, and a second counter configured to determine a delay of the data strobe signal received by the main circuit, when a write operation is performed.