公开(公告)号：US20230039823A1

公开(公告)日：2023-02-09

申请号：US17872143

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONGJIN JEONG ,  SEOKHAN PARK ,  YEJEE SUNWOO ,  BOWON YOO ,  YOUNGWOONG SON

IPC: H01L27/108

Abstract: A semiconductor device includes; cell transistors on a substrate, lower electrodes respectively connected to the cell transistors, arranged according to a first pitch in a first horizontal direction, and extending in a vertical direction, and an etching stop layer surrounding lower sidewalls of the lower electrodes and arranged at a level higher than a level of the cell transistors, wherein the etching stop layer includes a first portion vertically overlapping the lower electrodes and a second portion laterally surrounding the first portion, and the second portion includes recesses arranged according to a second pitch in the first horizontal direction.