公开(公告)号：US20220352375A1

公开(公告)日：2022-11-03

申请号：US17860820

申请日：2022-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mirco CANTORO ,  Yeoncheol HEO

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/417 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234

Abstract: The present disclosure relates to a field-effect transistor and a method of fabricating the same. A field-effect transistor includes a semiconductor substrate including a first semiconductor material having a first lattice constant, and a fin structure on the semiconductor substrate. The fin structure includes a second semiconductor material having a second lattice constant that is different from the first lattice constant. The fin structure further includes a lower portion that is elongated in a first direction, a plurality of upper portions protruding from the lower portion and elongated in a second direction that is different from the first direction, and a gate structure crossing the plurality of upper portions.

公开(公告)号：US20200343382A1

公开(公告)日：2020-10-29

申请号：US16923389

申请日：2020-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mirco CANTORO ,  Yeoncheol HEO

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/088 ,  H01L29/417 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234

Abstract: The present disclosure relates to a field-effect transistor and a method of fabricating the same. A field-effect transistor includes a semiconductor substrate including a first semiconductor material having a first lattice constant, and a fin structure on the semiconductor substrate. The fin structure includes a second semiconductor material having a second lattice constant that is different from the first lattice constant. The fin structure further includes a lower portion that is elongated in a first direction, a plurality of upper portions protruding from the lower portion and elongated in a second direction that is different from the first direction, and a gate structure crossing the plurality of upper portions.