公开(公告)号：US11462537B2

公开(公告)日：2022-10-04

申请号：US16919300

申请日：2020-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeong Han Gwon ,  Soo Yeon Jeong ,  Geum Jong Bae ,  Dong Il Bae

IPC: H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a first lower pattern and a second lower pattern on the substrate and arranged in a line in a first direction, a first active pattern stack disposed on and spaced apart from the first lower pattern, a second active pattern stack disposed on and spaced apart from the first lower pattern, a fin-cut gate structure disposed on the first lower pattern and overlapping a portion of the first lower pattern, a first gate structure surrounding the first active pattern stack and extending in a second direction crossing the first direction, a second gate structure surrounding the second active pattern stack and extending in the second direction, and a device isolation layer between the first gate structure and the second gate structure and separating the first lower pattern and the second lower pattern.