公开(公告)号：US20130230938A1

公开(公告)日：2013-09-05

申请号：US13854442

申请日：2013-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won KANG ,  Yong Chun KIM ,  Dong Hyun CHO ,  Jeong Tak OH ,  Dong Joon KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.