公开(公告)号：US20200089100A1

公开(公告)日：2020-03-19

申请号：US16564779

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soon Mok HA ,  Jae-hee KIM ,  Yong-wook LEE ,  Yong-woo KIM

IPC: G03F1/42 ,  H01L21/027

Abstract: A photomask for negative-tone development (NTD) includes a main region, and a scribe lane region surrounding the main region and including a first lane and a second lane. The first and the second lane is provided at first opposite sides of each other with respect to the main region. The first lane includes a first sub-lane extending in a first direction and a second sub-lane that extending in the first direction. The first sub-lane includes a first dummy pattern and the second sub-lane includes a second dummy pattern. The first dummy pattern and the second dummy pattern are configured to radiate light exceeding a threshold dose of light to a first portion of a negative-tone photoresist provided under the first lane of the photomask.