公开(公告)号：US09865602B2

公开(公告)日：2018-01-09

申请号：US15048075

申请日：2016-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongbum Kwon

IPC: H01L27/108 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L27/10814 ,  H01L23/528 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L29/0649

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The semiconductor devices may include a bit line provided to cross an active region of a substrate, isolation patterns provided on the substrate to face each other in a direction parallel to the bit line, a storage node contact provided between the isolation patterns to be in contact with a source/drain region provided in an upper portion of the active region, and a spacer provided between the bit line and the storage node contact. Here, the isolation patterns may include a material having an etch selectivity with respect to the spacer.

公开(公告)号：US12218086B2

公开(公告)日：2025-02-04

申请号：US17716054

申请日：2022-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongbum Kwon ,  Unbyoung Kang

IPC: H01L23/00 ,  H01L21/768

Abstract: A method of manufacturing a semiconductor package includes bonding first the and second structures, such that a first bonding structure is directly bonded to a second bonding structure. The forming of the first structure includes; forming a blocking layer on a metallic material layer including a first portion covering a concaved portion of the metallic material layer and a second portion covering a non-concaved portion of the metallic material layer, performing a first planarization process to remove the second portion of the blocking layer while the first portion of the blocking layer remains, performing a second planarization process to remove the non-concaved portion of the metallic material layer and expose the barrier layer on the insulating layer, performing a wet etching process to remove the barrier layer on the insulating layer and the blocking layer to form the first bonding pad including the barrier layer in the opening and the metallic material layer and forming a recessed portion below an upper surface of the metallic material layer on the barrier layer while removing the barrier layer on the insulating layer.

公开(公告)号：US20250157957A1

公开(公告)日：2025-05-15

申请号：US19022015

申请日：2025-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongbum Kwon ,  Unbyoung Kang

IPC: H01L23/00 ,  H01L21/768

Abstract: A first bonding structure is directly bonded to a second bonding structure. The forming of the first structure includes: forming a blocking layer on a metallic material layer including a first portion covering a concaved portion of the metallic material layer and a second portion covering a non-concaved portion of the metallic material layer, performing a first planarization process to remove the second portion of the blocking layer while the first portion of the blocking layer remains, performing a second planarization process to remove the non-concaved portion of the metallic material layer and expose the barrier layer on the insulating layer, and performing a wet etching process to remove the barrier layer on the insulating layer and the blocking layer to form the first bonding pad including the barrier layer in the opening and the metallic material layer.