公开(公告)号：US20200161499A1

公开(公告)日：2020-05-21

申请号：US16684720

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jitsuo OTA ,  Jihoon KANG ,  Sungtae KIM ,  Shunsuke KIMURA ,  Yongdok CHA

IPC: H01L33/00 ,  H01L33/10 ,  H01L25/075 ,  H01L33/62

Abstract: An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.