公开(公告)号：US20230371392A1

公开(公告)日：2023-11-16

申请号：US18118571

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonyoung LEE ,  Sanghwan Park ,  Yongsung Park ,  Jeongheon Park ,  Hyeonwoo Seo

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/85 ,  H01L23/528 ,  H10B80/00 ,  H01L25/16

CPC classification number: H10N50/10 ,  H10B61/22 ,  H10N50/85 ,  H01L23/5283 ,  H10B80/00 ,  H01L25/16

Abstract: A magnetoresistive memory device includes: a lower electrode; a lower magnetic material layer on the lower electrode; a tunnel barrier layer on the lower magnetic material layer; an upper magnetic material layer on the tunnel barrier layer; a cap structure, on the upper magnetic material layer, including first layers and second layers, alternately layered; a cap conductive layer on the cap structure; and an upper electrode on the cap conductive layer, wherein the first layers include a first material including a non-magnetic material, and the second layers include a second material including a magnetic material.