公开(公告)号：US20200185414A1

公开(公告)日：2020-06-11

申请号：US16791964

申请日：2020-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-Woo SEO ,  Youngsoo SHIN

IPC: H01L27/118 ,  H01L27/02 ,  H01L23/528 ,  G06F30/394

Abstract: A semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region. First active patterns are on the PMOSFET region. Second active patterns are on the NMOSFET region. Gate electrodes intersect the first and second active patterns and extend in a first direction. First interconnection lines are disposed on the gate electrodes and extend in the first direction. The gate electrodes are arranged at a first pitch in a second direction intersecting the first direction. The first interconnection lines are arranged at a second pitch in the second direction. The second pitch is smaller than the first pitch.

公开(公告)号：US20180254287A1

公开(公告)日：2018-09-06

申请号：US15908253

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Woo SEO ,  Youngsoo SHIN

IPC: H01L27/118 ,  H01L23/528 ,  H01L27/02 ,  G06F17/50

Abstract: A semiconductor device includes a substrate including a PMOSFET region and an NMOSFET region. First active patterns are on the PMOSFET region. Second active patterns are on the NMOSFET region. Gate electrodes intersect the first and second active patterns and extend in a first direction. First interconnection lines are disposed on the gate electrodes and extend in the first direction. The gate electrodes are arranged at a first pitch in a second direction intersecting the first direction. The first interconnection lines are arranged at a second pitch in the second direction. The second pitch is smaller than the first pitch.