公开(公告)号：US20190081180A1

公开(公告)日：2019-03-14

申请号：US15944175

申请日：2018-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung IL PARK ,  Jung Gun YOU ,  Dong Hun LEE ,  Yun IL LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49

Abstract: A semiconductor device includes a substrate; a vertical channel structure including a pair of active fins extended in a first direction, perpendicular to an upper surface of the substrate, and an insulating portion interposed between the pair of active fins; an upper source/drain disposed on the vertical channel structure; a lower source/drain disposed below the vertical channel structure and on the substrate; a gate electrode disposed between the upper source/drain and the lower source/drain and surrounding the vertical channel structure; and a gate dielectric layer disposed between the gate electrode and the vertical channel structure. An interval between the gate electrode and the upper source/drain may be smaller than an interval between the gate electrode and the lower source/drain in the first direction.