公开(公告)号：US10121735B2

公开(公告)日：2018-11-06

申请号：US15794131

申请日：2017-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Ah Nam ,  Ikuo Nakamatsu ,  Dong-Hyun Kim ,  Chul-Hong Park ,  Yun-Se Oh ,  Hae-Wang Lee ,  Ho-Jun Choi

IPC: H01L27/088 ,  H01L23/498 ,  H01L23/48 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes active fins on a substrate. Gate lines each extend in the second direction on the active fins. A contact plug is positioned on the active fins. A first via is in one of the first contact plugs. A first conductive line overlaps a first via. A first distance from a first active fin on which a first gate line of the gate lines is formed to an end of the first gate line is more than a predetermined distance. A second distance from a second active fin on which the first gate line is formed to the first active fin of the active fins is equal to or less than the predetermined distance. The second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs.